The origin of shape, orientation, and structure of spontaneously formed wurtzite GaN nanorods on Cubic Si(001) surface

Shetty, Satish, Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806, Ghatak, Jay and Shivaprasad, S. M. 2013. The origin of shape, orientation, and structure of spontaneously formed wurtzite GaN nanorods on Cubic Si(001) surface. Crystal Growth and Design 13 (6) , p. 2407. 10.1021/cg4000928

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Abstract

We elucidate the atomistic level details of the formation of 1-D GaN nanostructures on Si(001) by molecular beam epitaxy. In a multitechnique study, we understand the epitaxy and role of the unintentional interfacial SiNx layer in determining the shape, structure, and organization of the nanofeatures. The 1-D GaN features are seen to be m-faceted and grow along the Si(111) planes and thus are tilted with a 4-fold symmetry on the cubic Si(100) surface. The interfacial mismatch induced dislocations are shown to provide the nucleation centers for the spiral 1-D growth, while their local density determines their evolution into solid rods, tubes, or c-tubes. The unintentional interfacial nitridation of the substrate forms discontinuous amorphous mounds that provide the epitaxial contact to the substrate and also laterally isolate the rods/tubes, enabling them to grow laterally in their equilibrium hexagonal wurtzite structures. We consolidate the results into a schematic model to unveil the underlying mechanism and demonstrate the subtle relationship between the kinetics of growth and the interfacial properties.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Publisher:	American Chemical Society
ISSN:	1528-7483
Last Modified:	24 Oct 2022 07:39
URI:	https://orca.cardiff.ac.uk/id/eprint/115543

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