CMOS compatible all-silicon TM pass polarizer based on highly doped silicon waveguide

Saber, Md. Ghulam, Abadia, Nicolas ORCID: https://orcid.org/0000-0002-7355-4245 and Plant, David 2018. CMOS compatible all-silicon TM pass polarizer based on highly doped silicon waveguide. Optics Express 26 (16) , p. 20878. 10.1364/OE.26.020878

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Abstract

We propose and analyze via simulation a novel approach to implement a complementary metal-oxide-semiconductor compatible and high extinction ratio transverse magnetic pass polarizer on the silicon-on-insulator platform with a 340 nm thick silicon core. The TM-pass polarizer utilizes a highly doped p-silicon waveguide as the transverse hybrid plasmonic waveguide. We observed an extinction ratio of 30.11 dB and an insertion loss of 3.08 dB for a device length of 15 µm. The fabrication process of the proposed TM-pass polarizer is simpler compared to the state-of-the-art since it only uses silicon waveguides and does not require any special material or feature size.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Publisher:	Optical Society of America
ISSN:	1094-4087
Date of First Compliant Deposit:	9 November 2018
Date of Acceptance:	3 June 2018
Last Modified:	05 May 2023 07:16
URI:	https://orca.cardiff.ac.uk/id/eprint/116639

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