Multi-channel AlGaN/GaN lateral schottky barrier diodes on low-resistivity silicon for sub-THz integrated circuits applications

Eblabla, A. ORCID: https://orcid.org/0000-0002-5991-892X, Li, X., Alathbah, M., Wu, Z. ORCID: https://orcid.org/0000-0001-7100-3282, Lees, J. ORCID: https://orcid.org/0000-0002-6217-7552 and Elgaid, K. ORCID: https://orcid.org/0000-0003-3265-1097 2019. Multi-channel AlGaN/GaN lateral schottky barrier diodes on low-resistivity silicon for sub-THz integrated circuits applications. IEEE Electron Device Letters 40 (6) , pp. 878-880. 10.1109/LED.2019.2912910

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Abstract

This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q.cm) silicon substrates. The developed technology offers a reduction of 37 % in onset voltage, V ON (from 1.34 to 0.84 V), and 36 % in ON-resistance, R ON (1.52 to 0.97 to Q.mm) as a result of lowering the Schottky barrier height, Φn, when compared to conventional lateral SBDs. No compromise in reverse-breakdown voltage and reverse-bias leakage current performance was observed as both multi-channel and conventional technologies exhibited VBV of (VBV > 30 V) and I R of (I R <; 38 μA/mm), respectively. Furthermore, a precise small-signal equivalent circuit model was developed and verified for frequencies up to 110 GHz. The fabricated devices exhibited cut-off frequencies of up to 0.6 THz, demonstrating the potential use of lateral AlGaN/GaN SBDs on LR silicon for high-efficiency, high-frequency integrated circuits applications.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
ISSN:	0741-3106
Date of First Compliant Deposit:	9 July 2019
Date of Acceptance:	14 April 2019
Last Modified:	11 Nov 2024 19:45
URI:	https://orca.cardiff.ac.uk/id/eprint/123523

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