The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayers

Dyer, D., Church, S. A., Jain, M., Kappers, M. J., Frentrup, M., Wallis, D. J. ORCID: https://orcid.org/0000-0002-0475-7583, Oliver, R. A. and Binks, D. J. 2021. The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayers. Journal of Applied Physics 130 (8) , 085705. 10.1063/5.0057824

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Abstract

The effects of thermal annealing on the optical properties of Mg-doped cubic zincblende GaN epilayers grown by metalorganic chemical vapor deposition on 3C-SiC/Si (001) substrates are investigated. The photoluminescence spectra show near band edge features and a blue luminescence band that depend on Mg concentration, temperature, and excitation power density. Annealing the sample in a N2 atmosphere causes the intensity of the blue band to increase by a factor of 5. Power dependent photoluminescence measurements show a reduction in the laser excitation density required for saturation of the blue band after annealing, indicating an increase in the recombination lifetime. Time decay measurements confirm this increase, which is attributed to a reduction in the concentration of non-radiative defects after annealing. The results presented here are compared to those reported previously for Mg-doped hexagonal wurtzite GaN.

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Engineering
Publisher:	American Institute of Physics
ISSN:	0021-8979
Date of First Compliant Deposit:	10 September 2021
Date of Acceptance:	14 August 2021
Last Modified:	04 May 2023 14:06
URI:	https://orca.cardiff.ac.uk/id/eprint/143989

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