Kwan, D. C. M., Kesaria, M. ![]() ![]() ![]() ![]() |
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Abstract
Abstract: At room temperature, a 10 µm cut-off wavelength coincides with an infrared spectral window and the peak emission of blackbody objects. We report a 10 µm cut-off wavelength InAs/GaSb T2SL p-i-n diode on a GaAs substrate with an intentional interfacial misfit (IMF) array between the GaSb buffer layer and GaAs substrate. Transmission electron microscopy and energy-dispersive X-ray spectroscopy revealed that the heterostructure on GaSb-on-GaAs is epitaxial, single-crystalline but with a reduced material homogeneity, extended lattice defects and atomic segregation/intermixing in comparison to that on the GaSb substrate. Strain-induced degradation of the material quality is observed by temperature-dependent current–voltage measurements. The T2SL with the IMF array appears as a potentially effective route to mitigate the impact of the lattice mismatch once its fabrication is fully optimized for these systems, but additional strain compensating measures can enable a low cost, scalable manufacturing of focal plane arrays (FPA) for thermal imaging cameras for spectroscopy, dynamic scene projection, thermometry, and remote gas sensing.
Item Type: | Article |
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Date Type: | Published Online |
Status: | Published |
Schools: | Physics and Astronomy |
Additional Information: | License information from Publisher: LICENSE 1: URL: http://creativecommons.org/licenses/by/4.0/, Type: open-access |
Publisher: | Nature Research |
ISSN: | 2045-2322 |
Date of First Compliant Deposit: | 11 July 2022 |
Date of Acceptance: | 24 June 2022 |
Last Modified: | 06 Jan 2024 02:20 |
URI: | https://orca.cardiff.ac.uk/id/eprint/151194 |
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