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Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform

Kwan, D. C. M., Kesaria, M. ORCID:, Jiménez, J. J., Srivastava, V., Delmas, M. ORCID:, Liang, B. L., Morales, F. M. and Huffaker, D. L. ORCID: 2022. Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform. Scientific Reports 12 (1) , 11616. 10.1038/s41598-022-15538-3

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Abstract: At room temperature, a 10 µm cut-off wavelength coincides with an infrared spectral window and the peak emission of blackbody objects. We report a 10 µm cut-off wavelength InAs/GaSb T2SL p-i-n diode on a GaAs substrate with an intentional interfacial misfit (IMF) array between the GaSb buffer layer and GaAs substrate. Transmission electron microscopy and energy-dispersive X-ray spectroscopy revealed that the heterostructure on GaSb-on-GaAs is epitaxial, single-crystalline but with a reduced material homogeneity, extended lattice defects and atomic segregation/intermixing in comparison to that on the GaSb substrate. Strain-induced degradation of the material quality is observed by temperature-dependent current–voltage measurements. The T2SL with the IMF array appears as a potentially effective route to mitigate the impact of the lattice mismatch once its fabrication is fully optimized for these systems, but additional strain compensating measures can enable a low cost, scalable manufacturing of focal plane arrays (FPA) for thermal imaging cameras for spectroscopy, dynamic scene projection, thermometry, and remote gas sensing.

Item Type: Article
Date Type: Published Online
Status: Published
Schools: Physics and Astronomy
Additional Information: License information from Publisher: LICENSE 1: URL:, Type: open-access
Publisher: Nature Research
ISSN: 2045-2322
Date of First Compliant Deposit: 11 July 2022
Date of Acceptance: 24 June 2022
Last Modified: 06 Jan 2024 02:20

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