Fabrication of semi-polar (11-22) GaN V-groove MOSFET using wet etching trench opening technique

Yin, Yidi, Pinchbeck, Joseph, O'Regan, Colm, Guiney, Ivor, Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583 and Lee, Kean Boon 2022. Fabrication of semi-polar (11-22) GaN V-groove MOSFET using wet etching trench opening technique. IEEE Electron Device Letters 43 (10) , pp. 1641-1644. 10.1109/LED.2022.3203633

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Abstract

In this letter, we report the fabrication of an enhancement-mode V-groove metal oxide semiconductor field-effect transistor on semi-polar (11-22) GaN platform. A wet crystallographic hydroxide-based etching approach to achieve a vertical inversion trench sidewall is utilized. This novel fabrication method enables the formation of the vertical trench sidewall channel conduction without the need for a conventional chlorine-based dry etching. The fabricated VMOSFET exhibit a threshold voltage of 9.49 V, a current ON/OFF ratio of >10 7 , an ON-state resistance of 8.0 mΩ.cm 2 , and an output current of 516 A/cm 2 .

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Engineering
Publisher:	Institute of Electrical and Electronics Engineers
ISSN:	0741-3106
Date of First Compliant Deposit:	5 September 2022
Date of Acceptance:	3 September 2022
Last Modified:	08 Nov 2022 13:17
URI:	https://orca.cardiff.ac.uk/id/eprint/152343

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