Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well

Gundimeda, Abhiram, Kusch, Gunnar, Frentrup, Martin, Kappers, Menno J., Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583 and Oliver, Rachel A. 2024. Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well. Nanotechnology 35 (39) , 395705. 10.1088/1361-6528/ad5db4

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Abstract

Zincblende GaN has the potential to improve the efficiency of green- and amber-emitting nitride light emitting diodes due to the absence of internal polarisation fields. However, high densities of stacking faults are found in current zincblende GaN structures. This study presents a cathodoluminescence spectroscopy investigation into the low-temperature optical behaviour of a zincblende GaN/InGaN single quantum well structure. In panchromatic cathodoluminescence maps, stacking faults are observed as dark stripes, and are associated with non-radiative recombination centres. Furthermore, power dependent studies were performed to address whether the zincblende single quantum well exhibited a reduction in emission efficiency at higher carrier densities—the phenomenon known as efficiency droop. The single quantum well structure was observed to exhibit droop, and regions with high densities of stacking faults were seen to exacerbate this phenomenon. Overall, this study suggests that achieving efficient emission from zinc-blende GaN/InGaN quantum wells will require reduction in the stacking fault density.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Additional Information:	License information from Publisher: LICENSE 1: URL: http://creativecommons.org/licenses/by/4.0, Type: cc-by
Publisher:	IOP Publishing
ISSN:	0957-4484
Date of First Compliant Deposit:	12 July 2024
Date of Acceptance:	2 July 2024
Last Modified:	12 Jul 2024 08:15
URI:	https://orca.cardiff.ac.uk/id/eprint/170527

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