Free-standing lateral AlGaN/GaN Schottky Barrier Diode based-on GaN-on-Si technology for high microwave power applications

Eblabla, Abdalla ORCID: https://orcid.org/0000-0002-5991-892X, Sampson, Wesley ORCID: https://orcid.org/0000-0001-7670-0036, Collier, Arthur and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2024. Free-standing lateral AlGaN/GaN Schottky Barrier Diode based-on GaN-on-Si technology for high microwave power applications. Presented at: 19th European Microwave Integrated Circuits Conference (EuMIC), Paris, France, 23-24 September 2024. 2024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE, pp. 343-346. 10.23919/eumic61603.2024.10732350

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Abstract

This paper presents the development of a lateral AlGaN/GaN Schottky barrier diode (SBD) on free-standing GaN epilayers achieved through Si substrate removal for GaN-on-Si technology. Compared to conventional SBDs on GaN-on-Si, the newly developed free-standing AlGaN/GaN SBDs exhibit enhanced RF performance (cut-off frequency (f C ) and ideality factor (η n ) without compromising DC performance. DC results reveal an onset voltage (V ON ) of 1.34 V, on-resistance (R ON ) of 1.6 Ω•mm, and η n of 1.7 (14% improvement). Reverse-breakdown voltage (V BV ) exceeds 30 V, with a reverse-bias leakage current (I R ) below 38 μA/mm. RF performance demonstrates a f C of 80.2 GHz at zero-bias (11.14% enhancement). The impact of lossy Si substrate coupling effects on RF performance for both SBD structures was studied using 3D-EM simulations for further performance optimisation. These findings imply integrated GaNbased SBDs on Si technology are suitable for high-power and high-temperature system applications at millimetre-wave frequencies, particularly in conjunction with high-thermal coefficient materials such as diamond and AlN.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Engineering
Publisher:	IEEE
ISBN:	978-2-87487-078-1
Last Modified:	09 Dec 2024 16:46
URI:	https://orca.cardiff.ac.uk/id/eprint/173806

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