Sputtering grown wide band gap AlN thin films for high power capacitors

Liu, Renjun, Kant, Chandra, Othman, Diyar Mousa, Macdonald, David, Erkizan, Serena Nur, Solari, William, Ji, Hong, Ludtke, Ingo, Ming, Wenlong ORCID: https://orcid.org/0000-0003-1780-7292 and Hou, Bo ORCID: https://orcid.org/0000-0001-9918-8223 2024. Sputtering grown wide band gap AlN thin films for high power capacitors. Presented at: Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), Cardiff, UK, 16-18 September 2024. Proceedings of IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe. IEEE, pp. 1-3. 10.1109/WiPDAEurope62087.2024.10797419

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Abstract

This paper reports on the characterization of optical and electrical properties of aluminum nitride (AlN) thin films, achieved by varying the N2/Ar gas ratio during the sputtering process. Our findings reveal that AlN thin films can attain superior optical transmission in the visible spectrum compared to glass substrates, particularly at an optimal N2/Ar ratio. Additionally, we observed that the dielectric strength and breakdown voltage of the films improve as the N2/Ar ratio decreases, reaching a dielectric strength of approximately 4.5× 10 5 V/mm under optimized conditions. The study also demonstrates an increase in capacitance with higher applied DC voltage, attributed to the piezoelectric properties of AlN. These results highlight the potential of AlN thin films for applications in dielectric layers for power capacitors and gate materials in thin-film transistors.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Physics and Astronomy
Publisher:	IEEE
ISBN:	9798350362404
Funders:	EPSRC SWIMS (EP/V039717/1), Royal Society (RGS\R1\221009 and IEC\NSFC\211201) and EPSRC Researcher in Residence fellowship (RIR12221019-1)
Date of First Compliant Deposit:	20 December 2024
Date of Acceptance:	19 December 2024
Last Modified:	13 Jan 2025 12:15
URI:	https://orca.cardiff.ac.uk/id/eprint/174873

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