Large-area uniform III-V membranes grown on silicon-on-insulator by lateral tunnel epitaxy

Yan, Zhao, Zhang, Weiwei, Ebert, Martin, Ratiu, Bogdan, Reed, Graham T., Thomson, David J. and Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704 2024. Large-area uniform III-V membranes grown on silicon-on-insulator by lateral tunnel epitaxy. Presented at: 2024 IEEE Photonics Conference (IPC), Rome, Italy, 1-14 November 2024. 2024 IEEE Photonics Conference (IPC). IEEE, 10.1109/IPC60965.2024.10799698 Item availability restricted.

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Abstract

Lateral tunnel epitaxy of InP and InAs membranes on silicon-on-insulator (SOI) substrates is demonstrated. The near dislocation-free III-V membranes exhibit smooth growth fronts and are precisely positioned atop silicon (Si) waveguides or the Si device layer.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	In Press
Schools:	Physics and Astronomy
Publisher:	IEEE
ISBN:	9798350361964
ISSN:	2374-0140
Funders:	EPSRC
Date of First Compliant Deposit:	3 February 2025
Last Modified:	03 Feb 2025 14:45
URI:	https://orca.cardiff.ac.uk/id/eprint/174906

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