Brown, Richard, Liu, Chen, Seager, George, Alvarado, Francisco, Wong, Ka Ming  ORCID: https://orcid.org/0000-0003-3770-1380, Craig, Adam P., Beanland, Richard, Marshall, Andrew R. J., Davies, J. Iwan and Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704
2025.
13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD.
APL Photonics
10
(1)
, 016102.
10.1063/5.0231448
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Abstract
In this work, we report the growth and fabrication optimization of a long wavelength InAs/GaSb type-II superlattice (T2SL) nBn detector grown by metal–organic chemical vapor deposition. A GaAs like interfacial scheme was employed to grow the T2SLs matched to InAs substrates. A larger bandgap InAs/GaSb T2SL was used as an electron barrier, removing the need for AlSb based materials within this detector. At 77 K and −0.1 V, the photodetector showed a dark current density of 2.2 × 10−2 A cm−2 and a 100% cutoff wavelength of 13 µm. The external quantum efficiency was found to be 54.4% at 9 µm. The peak detectivity was found to be 4.43 × 1010 cm Hz1/2/W at 9 µm, which is very comparable with similar deep etched detectors grown by molecular beam epitaxy.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Publisher: | American Institute of Physics |
| ISSN: | 2378-0967 |
| Funders: | EPSRC |
| Projects: | EP/S024441/1 |
| Date of First Compliant Deposit: | 8 January 2025 |
| Date of Acceptance: | 16 December 2024 |
| Last Modified: | 13 Aug 2026 14:18 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/175127 |
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