Exploring the use of low-temperature atmospheric plasma polymerization for the reduction of parasitic currents in type-II superlattice devices

Gillies, R., McKay, K., Asku, K., Srivastava, V., Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806 and Sandall, I. 2025. Exploring the use of low-temperature atmospheric plasma polymerization for the reduction of parasitic currents in type-II superlattice devices. Plasma Physics and Controlled Fusion 67 (2) , 025012. 10.1088/1361-6587/ada1fa

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Abstract

Type-II superlattice (T2SL) devices have the potential to be the new generation of semiconductor-based devices, however fabrication of these devices leads to surface defects that can create surface leakage channels. Passivation methods that are typically used in traditional semiconductors have proved unsuccessful. In this paper we present the initial findings of a low-temperature atmospheric pressure plasma polymerisation process capable of removing the unwanted oxide layers and depositing a thin layer of polymer to protect the surface. We examine the effect of monomer flow rate on the plasma optical emission and electrical characteristics and investigate the deposition chemistry. Finally, we demonstrate the effectiveness of the plasma treatment on T2SL devices and underpin the potential for this technique. These results were presented at the 50th IOP Plasma Physics Conference, April 2024.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Publisher:	IOP Publishing
ISSN:	0741-3335
Date of First Compliant Deposit:	19 February 2025
Date of Acceptance:	20 December 2024
Last Modified:	19 Mar 2025 14:32
URI:	https://orca.cardiff.ac.uk/id/eprint/176322

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