MOCVD-grown InAs/InP quantum dot lasers with low threshold current

Yan, Zhao, Liu, Shangfeng, Ratiu, Bogdan, Wong, Parco ORCID: https://orcid.org/0000-0003-3770-1380, Zeng, Haotian, Wang, Yangqian, Park, Jaeseong, Jia, Hui, Tang, Mingchu, Liu, Huiyun, Smowton, Peter ORCID: https://orcid.org/0000-0002-9105-4842 and Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704 2025. MOCVD-grown InAs/InP quantum dot lasers with low threshold current. Optics Express 33 (15) , pp. 31195-31203. 10.1364/OE.568365

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Abstract

We report low-threshold-current, high-yield InAs/InP quantum dot lasers in the C- and L-bands grown by metal-organic chemical vapor deposition (MOCVD). By optimizing the epitaxial growth conditions, including the introduction of a GaAs interfacial layer, we achieved more in-plane symmetric quantum dots with improved optical quality. Deep-etched ridge waveguide lasers with a 4 μm ridge width and top–top metal contacts were fabricated and characterized under pulsed injection. Low threshold currents of 17 mA and 28 mA were obtained for cavity lengths of 300 μm and 1000 μm, respectively. Temperature-dependent measurements showed lasing sustained up to 120 °C with a characteristic temperature T0 of 74.9 K below 90 °C.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Publisher:	Optica Publishing Group
ISSN:	1094-4087
Date of First Compliant Deposit:	9 July 2025
Date of Acceptance:	20 June 2025
Last Modified:	16 Jul 2025 11:45
URI:	https://orca.cardiff.ac.uk/id/eprint/179665

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