Large-signal performance comparison of ion implant and mesa etch isolated AlGaN/GaN HEMT switches on silicon

Collier, Arthur, Eblabla, Abdalla ORCID: https://orcid.org/0000-0002-5991-892X, Sampson, Wesley ORCID: https://orcid.org/0000-0001-7670-0036, Shepphard, Daniel, Harvey, Alan, Quaglia, Roberto ORCID: https://orcid.org/0000-0003-3228-301X and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2025. Large-signal performance comparison of ion implant and mesa etch isolated AlGaN/GaN HEMT switches on silicon. Presented at: European Microwave Integrated Circuits Conference, Utrecht, The Netherlands, 23 September 2025. Proceedings of the 20th European Microwave Integrated Circuits Conference. IEEE, pp. 230-233. 10.23919/EuMIC65284.2025.11234588

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Abstract

This study presents a comparative analysis of large-signal performance for AlGaN/GaN high electron mobility transistor (HEMT) switches on a silicon substrate, isolated using either ion implantation or mesa etching. The investigation focuses on the impact of isolation methods on gate leakage, RF isolation, and harmonic distortion.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Schools > Engineering
Publisher:	IEEE
ISBN:	9798331512675
Date of First Compliant Deposit:	10 July 2025
Date of Acceptance:	16 May 2025
Last Modified:	25 Nov 2025 12:45
URI:	https://orca.cardiff.ac.uk/id/eprint/179686

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