O'Driscoll, Ian, Hutchings, Matthew, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Blood, Peter 2010. Many-body effects in InAs/GaAs quantum dot laser structures. Applied Physics Letters 97 (14) , 141102. 10.1063/1.3496011 |
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Official URL: http://dx.doi.org/10.1063/1.3496011
Abstract
We have measured the gain peak energy of GaInAs quantum dot laser structures, relative to the absorption peak, as a function of injection. We have used a calculation to remove the effects of state filling in the inhomogeneous distribution and to estimate the carrier density in the dots. We have identified shifts, which we associate with many body effects, of up to 8 meV at room temperature at injection levels typical for laser operation of about 2.2 electrons per dot, producing a peak modal gain of 10 cm-1.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Uncontrolled Keywords: | carrier density, gallium arsenide, indium compounds, laser beams, quantum dot lasers |
Additional Information: | 3 pp. |
Publisher: | American Institute of Physics |
ISSN: | 0003-6951 |
Last Modified: | 15 May 2023 17:43 |
URI: | https://orca.cardiff.ac.uk/id/eprint/18087 |
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