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Browse by Current Cardiff authors

Number of items: 7.

Hutchings, Matthew, O'Driscoll, I., Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Blood, Peter 2014. Fermi-dirac and random carrier distributions in quantum dot lasers. Applied Physics Letters 104 (3) , 031103. 10.1063/1.4862813
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Hutchings, Matthew D. 2012. Carrier distribution processes in Quantum Dot ensembles. PhD Thesis, Cardiff University.
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Hutchings, Matthew, O'Driscoll, Ian, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Blood, Peter 2011. Temperature dependence of the gain peak in p-doped InAs quantum dot lasers. Applied Physics Letters 99 (15) , pp. 151118-151121. 10.1063/1.3652702
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O'Driscoll, Ian, Hutchings, Matthew, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Blood, Peter 2010. Many-body effects in InAs/GaAs quantum dot laser structures. Applied Physics Letters 97 (14) , 141102. 10.1063/1.3496011
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Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842, Al-Ghamdi, M., Shutts, Samuel ORCID: https://orcid.org/0000-0001-6751-7790, Edwards, G., Hutchings, Matthew and Krysa, A. 2010. Effect of growth temperature on InP QD lasers. IEEE Photonics Technology Letters 22 (2) , pp. 88-90. 10.1109/LPT.2009.2036245

O'Driscoll, Ian, Hutchings, Matthew, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Blood, Peter 2010. Random population of InAs-GaAs quantum dots. Presented at: Novel in-plane semiconductor lasers IX, San Francisco, CA, USA, 25-28 January 2010. Published in: Belyanin, A. A. and Smowton, Peter Michael eds. Proceedings of Novel In-Plane Semiconductor Lasers IX, San Francisco, USA, 25-28 January 2010. Proceedings of SPIE (7616) Bellingham, WA: SPIE, p. 761605. 10.1117/12.845843

Clausen, K., Hayes, W., Hutchings, Matthew, Macdonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692, Osborn, R. and Schnabel, P. 1984. Investigation of oxygen disorder, thermal parameters, lattice vibrations and elastic constants of UO2 and ThO2 at temperatures up to 2 930 K. Revue de Physique Appliquée 19 (9) , pp. 719-722. 10.1051/rphysap:01984001909071900

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