ORCA
Online Research @ Cardiff
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Hutchings, Matthew, O'Driscoll, I., Smowton, Peter Michael  ORCID: https://orcid.org/0000-0002-9105-4842 and Blood, Peter
2014.
Fermi-dirac and random carrier distributions in quantum dot lasers.
Applied Physics Letters
104
(3)
, 031103.
10.1063/1.4862813
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Hutchings, Matthew D.
2012.
Carrier distribution processes in Quantum Dot ensembles.
PhD Thesis,
Cardiff University.
Item availability restricted. |
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Hutchings, Matthew, O'Driscoll, Ian, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Blood, Peter
2011.
Temperature dependence of the gain peak in p-doped InAs quantum dot lasers.
Applied Physics Letters
99
(15)
, pp. 151118-151121.
10.1063/1.3652702
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O'Driscoll, Ian, Hutchings, Matthew, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Blood, Peter
2010.
Many-body effects in InAs/GaAs quantum dot laser structures.
Applied Physics Letters
97
(14)
, 141102.
10.1063/1.3496011
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Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842, Al-Ghamdi, M., Shutts, Samuel ORCID: https://orcid.org/0000-0001-6751-7790, Edwards, G., Hutchings, Matthew and Krysa, A.
2010.
Effect of growth temperature on InP QD lasers.
IEEE Photonics Technology Letters
22
(2)
, pp. 88-90.
10.1109/LPT.2009.2036245
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O'Driscoll, Ian, Hutchings, Matthew, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Blood, Peter
2010.
Random population of InAs-GaAs quantum dots.
Presented at: Novel in-plane semiconductor lasers IX,
San Francisco, CA, USA,
25-28 January 2010.
Published in: Belyanin, A. A. and Smowton, Peter Michael eds.
Proceedings of Novel In-Plane Semiconductor Lasers IX, San Francisco, USA, 25-28 January 2010.
Proceedings of SPIE
(7616)
Bellingham, WA:
SPIE,
p. 761605.
10.1117/12.845843
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Clausen, K., Hayes, W., Hutchings, Matthew, Macdonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692, Osborn, R. and Schnabel, P.
1984.
Investigation of oxygen disorder, thermal parameters, lattice vibrations and elastic constants of UO2 and ThO2 at temperatures up to 2 930 K.
Revue de Physique Appliquée
19
(9)
, pp. 719-722.
10.1051/rphysap:01984001909071900
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