Effect of growth temperature on InP QD lasers

Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842, Al-Ghamdi, M., Shutts, Samuel ORCID: https://orcid.org/0000-0001-6751-7790, Edwards, G., Hutchings, Matthew and Krysa, A. 2010. Effect of growth temperature on InP QD lasers. IEEE Photonics Technology Letters 22 (2) , pp. 88-90. 10.1109/LPT.2009.2036245

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Abstract

We describe the effect of growth temperature on the optical absorption, gain, and threshold current density of 730-nm emitting, metal-organic vapor phase epitaxy (MOVPE) grown, InP-AlGaInP quantum-dot lasers. Decreasing the growth temperature from 750??C to 690??C leads to an increase in ground state absorption, while sufficient optical gain and low 300 K threshold current density is obtained in the growth temperature window between 710??C and 730??C . Wider (16 nm compared to 8 nm) interlayer barriers lead to lower threshold current density with 300 K values as low as 165 Acm-2 for 2-mm-long lasers with uncoated facets.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	Quantum dots, semiconductor laser, semiconductor materials
Publisher:	IEEE
ISSN:	1041-1135
Last Modified:	19 Oct 2022 08:32
URI:	https://orca.cardiff.ac.uk/id/eprint/18102

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