Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Effect of growth temperature on InP QD lasers

Smowton, Peter Michael ORCID:, Al-Ghamdi, M., Shutts, Samuel ORCID:, Edwards, G., Hutchings, Matthew and Krysa, A. 2010. Effect of growth temperature on InP QD lasers. IEEE Photonics Technology Letters 22 (2) , pp. 88-90. 10.1109/LPT.2009.2036245

Full text not available from this repository.


We describe the effect of growth temperature on the optical absorption, gain, and threshold current density of 730-nm emitting, metal-organic vapor phase epitaxy (MOVPE) grown, InP-AlGaInP quantum-dot lasers. Decreasing the growth temperature from 750??C to 690??C leads to an increase in ground state absorption, while sufficient optical gain and low 300 K threshold current density is obtained in the growth temperature window between 710??C and 730??C . Wider (16 nm compared to 8 nm) interlayer barriers lead to lower threshold current density with 300 K values as low as 165 Acm-2 for 2-mm-long lasers with uncoated facets.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Quantum dots, semiconductor laser, semiconductor materials
Publisher: IEEE
ISSN: 1041-1135
Last Modified: 19 Oct 2022 08:32

Citation Data

Cited 10 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item