Clowes, S. K., Allford, C. P. ![]() ![]() |
Official URL: https://doi.org/10.1103/rr3f-3zhd
Abstract
We studied InSb quantum well devices using Landau-level tunneling spectroscopy through a three-terminal differential conductance technique. This method is similar to filled-state scanning tunneling microscopy but uses a stationary contact instead of a mobile tip to analyze the two-dimensional electron system. Applying magnetic fields up to 15 T, we identified clear peaks in the differential current-voltage profiles, indicative of Landau-level formation. By examining deviations from the expected Landau fan diagram, we extract an absolute value for the exchange-induced energy shift. Through an empirical analysis, we derive a formula describing the exchange shift as a function of both magnetic field strength and electron filling.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Schools > Physics and Astronomy |
Publisher: | American Physical Society |
ISSN: | 0031-9007 |
Date of Acceptance: | 22 August 2025 |
Last Modified: | 09 Oct 2025 14:18 |
URI: | https://orca.cardiff.ac.uk/id/eprint/181575 |
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