Wide tunability of zincblende InGaN/GaN quantum wells grown by metal–organic vapour phase epitaxy

Dyer, D., Fieldhouse-Allen, W. R., Church, S. A., Kappers, M. J., Frentrup, M., Vacek, P., Wallis, D. J. ORCID: https://orcid.org/0000-0002-0475-7583, Oliver, R. A. and Binks, D. J. 2026. Wide tunability of zincblende InGaN/GaN quantum wells grown by metal–organic vapour phase epitaxy. Journal of Physics D: Applied Physics 59 (11) , 115107. 10.1088/1361-6463/ae4ef9

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Abstract

It is shown that for zincblende InGaN/GaN quantum wells (QWs) produced by metal–organic vapour phase epitaxy, reducing the growth temperature from 740 °C to 684 °C tunes the emission from the blue to the orange region of the visible spectrum. The emission spectrum was found to be independent of the excitation density at each growth temperature, consistent with the QWs being free of significant internal polarisation fields. The spectrally integrated emission intensity at 300 K grows from 22% to 34% of its value at 11 K as the peak emission energy decreases from 2.75 eV to 2.0 eV; this reduction in thermal quenching as the emission energy decreases is attributed to a significant lessening of thermionic emission.

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Schools > Engineering
Additional Information:	License information from Publisher: LICENSE 1: URL: https://creativecommons.org/licenses/by/4.0/, Type: cc-by
Publisher:	IOP Publishing
ISSN:	0022-3727
Date of First Compliant Deposit:	25 March 2026
Date of Acceptance:	9 March 2026
Last Modified:	25 Mar 2026 10:01
URI:	https://orca.cardiff.ac.uk/id/eprint/186011

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