Peach, Tomas, Makela, Sanna, Qiao, Dun, Sobiesierski, Angela and Smowton, Peter  ORCID: https://orcid.org/0000-0002-9105-4842
2026.
Hybrid HSQ resist-mask lithography for ultra-low line edge roughness 150 mm InP wafer scale up.
IEEE Transactions on Semiconductor Manufacturing
10.1109/tsm.2026.3727003
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Abstract
Nanoscale device definition in 150 mm Indium Phosphide (InP) wafer processing provides a challenge for electron beam lithography (EBL) in terms of balancing throughput with pattern quality. We explore the limitations of resolution and line edge roughness on our previously reported hybrid resist process and compare it to conventional hydrogen silsesquioxane (HSQ) exposures. The improvement in patterning quality from HSQ comes at the cost of increased exposure times and reduced process flexibility. We therefore propose a novel hybrid ‘resistmask’ process which allows for optimizing the throughput of HSQ processing, without sacrificing quality, which could prove invaluable for the fabrication of first order distributed feedback (DFB) lasers on 150 mm InP, and other photonic device architectures. Further, we also demonstrate the application of this technique as a viable method for achieving a low open area (LOA) HSQ mask definition where conventional exposures would require a ∼90% wafer area exposure.
| Item Type: | Article |
|---|---|
| Date Type: | Published Online |
| Status: | In Press |
| Schools: | Schools > Physical, Chemical & Environmental Sciences Schools > Physics and Astronomy Research Institutes & Centres > Institute for Compound Semiconductors (ICS) |
| Additional Information: | RRS applied |
| Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
| ISSN: | 0894-6507 |
| Date of First Compliant Deposit: | 4 September 2026 |
| Last Modified: | 02 Oct 2026 22:45 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/189280 |
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