O'Driscoll, Ian, Smowton, Peter Michael ![]() |
Abstract
Measurements of the unamplified spontaneous emission spectra from 80 K to 350 K of a dot ensemble show clear evidence for increased population of higher lying states in the inhomogeneous distribution as the temperature is reduced from 200 K to 80 K, indicating a nonthermal population at low temperature and confirming that the recombination processes are localized in individual dots. These conclusions are supported by modeling an inhomogeneous ensemble of 2 times 106 dots. From simultaneous measurements of optical gain, our data show that the increase in threshold current density with decreasing temperature below about 200 K (which is commonly observed) is due to increased population of higher lying states associated with the transition to nonthermal behavior.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Uncontrolled Keywords: | Quantum dots (QDs) , semiconductor devices , semiconductor lasers |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 0018-9197 |
Last Modified: | 19 Oct 2022 10:01 |
URI: | https://orca.cardiff.ac.uk/id/eprint/22942 |
Citation Data
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