Highly strained GaxIn1-xP/(AlyGa1-y)(0.51)In0.49P quantum well lasers

Mogensen, P. C., Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Blood, Peter 1996. Highly strained GaxIn1-xP/(AlyGa1-y)(0.51)In0.49P quantum well lasers. Presented at: 15th IEEE International Semiconductor Laser Conference, Haifa, Israel, 13-18 October 1996. 15th IEEE International Semiconductor Laser Conference, 1996. Los Alamitos, CA: IEEE, pp. 97-98. 10.1109/ISLC.1996.553765

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Abstract

For increasing compressive strain (1%-1.7%), the 290 K threshold current increases by a factor 3.3. We experimentally show this arises from an increased waveguide loss (10 cm/sup -1/-46 cm/sup -1/) because the well is no longer elastically strained.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IEEE
ISBN:	078033163X
Last Modified:	20 Oct 2022 09:10
URI:	https://orca.cardiff.ac.uk/id/eprint/30884

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