Fermi level pinning and differential efficiency in GaInP quantum well laser diodes

Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Blood, Peter 1997. Fermi level pinning and differential efficiency in GaInP quantum well laser diodes. Applied Physics Letters 70 (9) , pp. 1073-1075. 10.1063/1.118488

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Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	gallium compounds, indium compounds, III-V semiconductors, quantum well lasers, Fermi level, interface states, spontaneous emission, laser cavity resonators
Additional Information:	Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0003-6951/ (accessed 21/02/2014).
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date of First Compliant Deposit:	30 March 2016
Last Modified:	08 Oct 2023 19:34
URI:	https://orca.cardiff.ac.uk/id/eprint/30889

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