Lasing characteristics of coupled InGaAs/GaAs multi-layers quantum dots laser

Ning, Y., Gao, X., Wang, L., Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Blood, Peter 2001. Lasing characteristics of coupled InGaAs/GaAs multi-layers quantum dots laser. Presented at: 6th International Conference on Solid-State and Integrated-Circuit Technology, 2001, 22-25 October 2001. Proceedings: 6th International Conference on Solid-State and Integrated-Circuit Technology, 2001. , vol.2 Los Alamitos, CA: IEEE, pp. 1249-1251. 10.1109/ICSICT.2001.982126

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Abstract

Coupled multi-layers InGaAs/GaAs quantum dots materials were grown by MBE. The lasers were fabricated in the geometry of oxide stripes. The temperature dependence of threshold current density is measured for the lasers with different cavity lengths. The average threshold current density is as low as 48 A/cm2, a record as we know. The laser with long cavity exhibits lasing at ground QDs state while lasing at excited quantum dot state or wetting layer state dominates the transition for lasers with shorter cavity.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IEEE
ISBN:	0780365208
Last Modified:	20 Oct 2022 09:11
URI:	https://orca.cardiff.ac.uk/id/eprint/30936

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