Nitridation of the GaAs(001) surface: Thermal behavior of the (3×3) reconstruction and its evolution

Lu, J., Haworth, L., Hill, P., Westwood, David and Macdonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692 1999. Nitridation of the GaAs(001) surface: Thermal behavior of the (3×3) reconstruction and its evolution. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 17 (4) , pp. 1659-1676. 10.1116/1.590806

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Abstract

The nitridation of the GaAs(001) surface using a radio frequency atomic nitrogen plasma source in a molecular beam epitaxy growth chamber has been studied. The resulting nitrogen induced GaAs(001) (3×3) reconstruction was investigated by in situ reflection high energy electron diffraction and x-ray photoemission spectroscopy (XPS). It was found that this reconstruction is only obtained in the temperature range 400–580 °C with a very low dose of atomic nitrogen. The nitrogen coverage corresponding to the (3×3) reconstruction was determined by quantitative XPS to be 0.30±0.09 ML. Below 400 °C an As–N species of disordered structure was found on the GaAs(001) surface. Subsequent annealing at about 500 °C produced the (3×3) reconstruction. Above 580 °C, nitridation lead to direct formation of β-GaN islands. In addition, the (3×3) reconstruction was found to be unstable to both exposure to atomic hydrogen and annealing. The N desorption activation energy of the (3×3) was estimated to be 2.75±0.55 eV. A surface phase diagram of the (3×3) has thus been deduced.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	gallium arsenide; III-V semiconductors; nitridation; surface reconstruction; reflection high energy electron diffraction; X-ray photoelectron spectra; annealing; desorption; island structure; wide band gap semiconductors
Publisher:	American Vacuum Society
ISSN:	0734-211X
Last Modified:	24 Oct 2022 10:46
URI:	https://orca.cardiff.ac.uk/id/eprint/45817

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