An investigation by spot profile analysis low energy electron diffraction of Si grown on GaAs(001)

Levermann, A. H., Woolf, D. A., Westwood, David and MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692 1996. An investigation by spot profile analysis low energy electron diffraction of Si grown on GaAs(001). Surface Science 352-54 , pp. 812-816. 10.1016/0039-6028(95)01281-8

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Abstract

We present the first in-situ spot profile analysis low energy electron diffraction (SPA-LEED) study of the MBE growth of sub-monolayer coverages (0 to 1 ML) of Si on GaAs(001). Changes in the surface reconstructions from c(4 × 4) via mixed c(4 × 4)/(1 × 2), (1 × 2)/(2 × 1), (1 × 2)/asymmetric (3 × 1) and asymmetric (3 × 1) to a (3 × 1) increasing Si coverage have been monitored. Results are subsequently compared with recent in-situ reflection high energy electron diffraction (RHEED) and scanning tunnelling microscopy (STM) measurements. The continuous splitting between the View the MathML source diffraction spots up to the completion of the symmetric (3 × 1) reconstruction has been examin detail. Domain sizes for each reconstruction have been quantified from the spot profiles.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	Gallium arsenide; Heterojunctions; Low energy electron diffraction (LEED); Molecular beam epitaxy; Reflection high-energy electron diffraction (RHEED); Semiconductor-semiconductor interfaces; Silicon; Single crystal surfaces
Publisher:	Elsevier
ISSN:	0039-6028
Last Modified:	24 Oct 2022 10:48
URI:	https://orca.cardiff.ac.uk/id/eprint/45959

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