Photoluminescence study of the 2D electron gas formed at the interface of strained InGaAs/InP single heterostructures

Tabata, A., Benyattou, T., Pogany, D., Guillot, G., Clark, S. A., MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692, Westwood, David and Williams, R. H. 1993. Photoluminescence study of the 2D electron gas formed at the interface of strained InGaAs/InP single heterostructures. Applied Surface Science 65-66 , pp. 814-820. 10.1016/0169-4332(93)90761-Y

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Abstract

Photoluminescence measurements have been performed in two series of strained InxGa1-xAs/InP single heterostructures, grown by molecular beam epitaxy with different epilayer thicknesses. Tensile strained samples (xIn = 0.508) and compressive strained samples (xIn = 0.543) have been investigated. An emission 30 meV below the excitonic recombination has been observed in these structures and we ascribe it to a recombination between photocreated holes and electrons from the two-dimensional electron gas formed at the InGaAs/InP interface. The role of the epilayer thickness on the photoluminescence recombination mechanism of the two-dimensional electron gas is discussed. Measurements of the photoluminescence temperature dependence have revealed the heavy-hole and light-hole splitting in this emission. The value of this splitting is in very good agreement with the expected values obtained by double crystal X-ray diffraction measurements.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	0169-4332
Last Modified:	24 Oct 2022 10:49
URI:	https://orca.cardiff.ac.uk/id/eprint/45965

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