Schottky barrier height at the Au/porous silicon interface

Ke, M., Matthai, Clarence Cherian, Pavlov, A. and Laiho, R. 1998. Schottky barrier height at the Au/porous silicon interface. Applied Surface Science 123-4 , pp. 454-457. 10.1016/S0169-4332(97)00488-1

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Abstract

The Schottky barrier height at the Au/porous silicon interface has been studied with ballistic electron emission microscopy (BEEM). The porous silicon thin films were prepared by laser ablation. The barrier height was found to display considerable variation across the interface. We suggest that this barrier height variation is a reflection of the local bonding differences at the Au/porous Si interface.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	0169-4332
Last Modified:	04 Jun 2017 05:04
URI:	https://orca.cardiff.ac.uk/id/eprint/47966

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