The role of acceptor anneal temperature on the performance of InGaN/GaN quantum well light emitting diodes

Thomson, John Duncan, Pope, Iestyn ORCID: https://orcid.org/0000-0002-4104-0389, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842, Blood, Peter, Lynch, R. J., Hill, G., Wang, T. and Parbrook, P. J. 2005. The role of acceptor anneal temperature on the performance of InGaN/GaN quantum well light emitting diodes. Presented at: Physics and simulation of optoelectronic devices XIII, San Jose, USA, 24-27 January 2005. Published in: Osinski, Marek., Henneberger, Fritz and Amano, Hiroshi eds. Physics and Simulation of Optoelectronic Devices XIII. Physics and Simulation of Optoelectronic Devices XIII. Proceedings of SPIE (5722) Bellingham: SPIE, pp. 425-430. 10.1117/12.591897

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Abstract

We have measured the pulsed light-current characteristics of a series of InGaN/GaN quantum well light-emitting diodes which were annealed post-growth at different temperatures as a function of their operating temperature. The light output at a fixed current density increases with the temperature of measurement, reaches a maximum and then decreases for all the diodes. The measurement temperature at which the maximum light output occurs and the magnitude of the light output depend on the post-growth thermal anneal temperature. The thermal anneal temperature is thought to affect the acceptor concentration in the p-doped cap layer, which also changes the carrier mobility. A simulation, incorporating carrier leakage, is used to reproduce the experimental behavior where the acceptor concentration is changed to represent the effects of the different anneal temperatures.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	Gallium nitride; Indium gallium nitride; Light emitting diodes; Quantum wells; Simulations; Diodes
Publisher:	SPIE
ISBN:	9780819456960
Last Modified:	14 Sep 2023 01:07
URI:	https://orca.cardiff.ac.uk/id/eprint/53201

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