Effect of nitrogen on gain and efficiency in InGaAsN quantum-well lasers

Palmer, D. J., Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842, Blood, Peter, Yeh, Jeng-Ya, Mawst, L. J. and Tansu, Nelson 2005. Effect of nitrogen on gain and efficiency in InGaAsN quantum-well lasers. Applied Physics Letters 86 (7) , 071121. 10.1063/1.1868070

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Abstract

We compare the gain and radiative efficiency characteristics of an InGaAsN and an InGaAs laser structure where the devices are identical except for the nitrogen content and emission wavelength. We find that the inclusion of nitrogen has little impact on the gain spectra except for the required shift to longer wavelength and that the intrinsic gain-radiative current characteristics may be slightly better for the nitrogen-containing materials. The radiative efficency is reduced by a factor of 4 in the samples containing nitrogen due to increased nonradiative recombination.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Institute of Physics
ISSN:	0003-6951
Last Modified:	25 Oct 2022 09:40
URI:	https://orca.cardiff.ac.uk/id/eprint/59547

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