Computer simulation of adatom dynamics on single-stepped SiC(001) surfaces

Bhatti, Q. A. and Matthai, Clarence Cherian 1998. Computer simulation of adatom dynamics on single-stepped SiC(001) surfaces. Thin Solid Films 318 (1-2) , pp. 46-51. 10.1016/S0040-6090(97)01136-X

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Abstract

We have performed molecular dynamics simulations to determine the adsorption and diffusion activation energies of Si and C adatoms on the single stepped surfaces, SA, SB(n) and SB(b), of SiC(001). We find that Si adatoms, unlike C adatoms, have to overcome a barrier at the step edge before it can diffuse from the upper to lower ledge. From an examination of C adatom diffusion events, we conclude that layer by layer growth is most likely when there are SA type steps

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	Adatom dynamics; SiC(001) surfaces; Simulations.
Publisher:	Elsevier
ISSN:	0040-6090
Last Modified:	04 Jun 2017 06:48
URI:	https://orca.cardiff.ac.uk/id/eprint/64911

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