Metal-semiconductor fluctuations on reconstructed Sn--Si(111) surfaces

Anyele, H.T., Griffiths, C. L., Cafolla, A.A., Matthai, Clarence Cherian and Williams, R.H. 1998. Metal-semiconductor fluctuations on reconstructed Sn--Si(111) surfaces. Applied Surface Science 123-4 , pp. 480-484. 10.1016/S0169-4332(97)00527-8

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Abstract

We present soft X-ray photoelectron spectroscopy results from the T4single bondSn/Si(111)−(3×3)R30° (√3 for short) and the Sn/Si(111)−(2√3× 2√3)R30° (2√3 for short). Sn 4d spectra recorded using 110 eV photons reveal two components for the 2√3 phase with the smaller one shifted by 0.38 eV towards low kinetic energy relative to the larger one. The √3 phase on the other hand could only be fitted with three components. The intensity of the largest component decreases with increasing Sn coverage and almost disappears at 1.1 monolayers (i.e. corresponding to the 2√3). From our analysis, we find that in the √3 phase, 10% of the surface is covered by 2√3 reconstruction and 90% by √3 reconstruction. These results suggest metal-semiconductor fluctuations on the √3 reconstruction as well as for mixed √3 and 2√3 phases

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	01694332
Last Modified:	04 Jun 2017 06:48
URI:	https://orca.cardiff.ac.uk/id/eprint/64914

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