Reflectance anisotropy of the GaAs(001) (2×4) surface: Ab initio calculations

Morris, S., Bass, J. and Matthai, Clarence Cherian 1995. Reflectance anisotropy of the GaAs(001) (2×4) surface: Ab initio calculations. Physical Review B 52 (23) , pp. 16739-16743. 10.1103/PhysRevB.52.16739

Full text not available from this repository.

Abstract

Using an ab initio, nonlocal pseudopotential method, we have calculated the reflectance anisotropy of three different models of the GaAs(001) (2×4) surface. We find that the dominant contribution to the anisotropy comes from optical transitions between bulk valence-band states and unoccupied surface states. The best fit to the low-temperature experimental reflectance anisotropy spectrum, as observed in situ, is obtained from a linear combination of the calculated spectra from the different models taking ∼80% from that due to the β2(2×4) model and ∼20% from that due to the α(2×4) model

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Physical Society
ISSN:	0163-1829
Last Modified:	04 Jun 2017 06:48
URI:	https://orca.cardiff.ac.uk/id/eprint/64955

Citation Data

Cited 30 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item