Matthai, Clarence Cherian, Gavartin, J. L. and Cafolla, A. A. 1995. Structural and elastic properties of porous silicon. Thin Solid Films 255 (1-2) , pp. 174-176. 10.1016/0040-6090(94)05648-W |
Official URL: http://dx.doi.org/10.1016/0040-6090(94)05648-W
Abstract
We have implemented a modified diffusion-limited aggregation model to simulate the porous silicon structure obtained by electrochemical dissolution. The resulting fractal structures were fully equilibrated using the molecular dynamics method. An analysis of the relaxed structure shows it to be quite stable with the presence of one-, two- and three-coordinated atoms as well as the four-coordinated atoms found in bulk silicon. It is suggested that the different substructures or nanocrystals might be responsible for the observed photoluminescence
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Uncontrolled Keywords: | Elastic properties; Silicon; Structural properties. |
Publisher: | Elsevier |
ISSN: | 0040-6090 |
Last Modified: | 04 Jun 2017 06:48 |
URI: | https://orca.cardiff.ac.uk/id/eprint/64957 |
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