Scanning-tunneling-microscopy and spectroscopy simulation of the GaAs(110) surface

Bass, J. M. and Matthai, Clarence Cherian 1995. Scanning-tunneling-microscopy and spectroscopy simulation of the GaAs(110) surface. Physical Review B 52 (7) , pp. 4712-4715. 10.1103/PhysRevB.52.4712

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Abstract

We have generated, using an ab initio pseudopotential method and the Bardeen transfer Hamiltonian approximation, scanning-tunneling-microscopy images and scanning-tunneling-spectroscopy spectra of the GaAs (110) surface. The surface was fully relaxed and a cluster of four Al atoms was used to represent the tip. We investigate the effect of different tip-surface bias voltages on the scanning-tunneling-microscopy images and ompare them to experimental results. In particular, the effectiveness of using the images to determine the buckling angle of the surface bond is discussed. For the scanning-tunneling-spectroscopy spectra, different lateral tip positions were utilized and various features associated with surface states were identified, which we also compare with experiment.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Physical Society
ISSN:	0163-1829
Last Modified:	04 Jun 2017 06:48
URI:	https://orca.cardiff.ac.uk/id/eprint/64969

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