Reflectance anisotropy of reconstructed GaAs(001) surfaces

Morris, S. J., Bass, J. M., Matthai, Clarence Cherian, Milman, V. and Payne, M. C. 1994. Reflectance anisotropy of reconstructed GaAs(001) surfaces. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 12 (4) , pp. 2684-2688. 10.1116/1.587231

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Abstract

We have performed ab initio pseudopotential calculations of three alternative structures of the GaAs(001) surface to examine the dependence of the reflectance anisotropyspectrum (RAS) upon the precise surface configuration. Spectra were calculated based upon a hypothetical (2×1) surface, a (2×4)‐β surface using experimentally measured atom positions, and a (2×4)‐β surface using atom positions given by total‐energy minimization. It was found that the RA spectra depended significantly upon the atom positions, and in particular, that proper surface relaxation, including the Ga layer below the surface, was necessary in order to account for the low‐energy (2.5 eV) feature in the experimentally observed spectrum

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Institute of Physics
ISSN:	0734-211X
Last Modified:	04 Jun 2017 06:48
URI:	https://orca.cardiff.ac.uk/id/eprint/64970

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