Bonding and dipoles at semiconductor interfaces

Matthai, Clarence Cherian 1994. Bonding and dipoles at semiconductor interfaces. Philosophical Magazine Part B 69 (5) , pp. 941-944. 10.1080/01418639408240162

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Abstract

We show that the values of the observed barriers to electrical transport across semiconductor interfaces can be explained in terms of a natural line-up corrected by a potential drop determined by the amount of charge transfer across this interface. This electrical dipole, and hence the barrier, can be altered by the judicious use of interlayers at the interface.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Taylor & Francis
ISSN:	13642812
Last Modified:	04 Jun 2017 06:48
URI:	https://orca.cardiff.ac.uk/id/eprint/64971

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