Theoretical simulation of scanning-tunneling-microscopy images of the GaAs(001)β(2×4) and β(4×2) surfaces

Bass, J. M. and Matthai, Clarence Cherian 1994. Theoretical simulation of scanning-tunneling-microscopy images of the GaAs(001)β(2×4) and β(4×2) surfaces. Physical Review B 50 (15) , pp. 11212-11215. 10.1103/PhysRevB.50.11212

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Abstract

Using the first-principle ab initio pseudopotential method and the Bardeen transfer Hamiltonian approximation, we have calculated scanning-tunneling-microscopy images of the fully relaxed GaAs(001) β(2×4) and β(4×2) surfaces. Our calculation included a four-atom Al cluster to represent the tip. We present the results that we obtained for these two different surfaces at different tip-surface bias voltages and discuss the relationship between the simulated scanning-tunneling-microscopy images and the surface charge density within the given energy range with respect to the Fermi level.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Physical Society
ISSN:	0163-1829
Last Modified:	04 Jun 2017 06:48
URI:	https://orca.cardiff.ac.uk/id/eprint/64972

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