Control of electrical barriers at semiconductor heterojunctions by interface doping [and discussion]

Matthai, Clarence Cherian, Srivastava, G. P. and Palmer, D. W. 1993. Control of electrical barriers at semiconductor heterojunctions by interface doping [and discussion]. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 344 (1673) , pp. 579-586. 10.1098/rsta.1993.0110

Full text not available from this repository.

Abstract

From the results of self-consistent calculations on semiconductor heterojunction structures it has been shown that the band offsets depend on the potential lineup which in turn is determined by strain and charge transfer effects. The latter induces an electric dipole at the interface which can be altered by the introduction of suitable interlayers at or near the interface

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	The Royal Society
ISSN:	1364-503X
Last Modified:	04 Jun 2017 06:48
URI:	https://orca.cardiff.ac.uk/id/eprint/64986

Actions (repository staff only)

Edit Item