Effect of surface reconstruction on Fermi-level pinning in the Sn on Si(111) system

Griffiths, C. L., Anyele, H. T., Matthai, Clarence Cherian, Cafolla, A. A. and Williams, R. H. 1993. Effect of surface reconstruction on Fermi-level pinning in the Sn on Si(111) system. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11 (4) , pp. 1559-1563. 10.1116/1.586969

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Abstract

We have performed detailed photoemission studies on the Si(111)(√3×√3)R30°‐Sn and Si(111)(2√3×2√3)R30°‐Sn reconstructed surfaces. Band bending is observed in both cases resulting in n‐type Schottky barrier heights of (0.66±0.09) and (0.99±0.10) eV, respectively. In parallel, theoretical calculations using the self‐consistent tight binding method in the extended Huckel approximation have been performed to determine the electronic structure and barrier heights at these reconstructed surfaces. The difference in barrier heights is found to be in excellent agreement with experiment.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Institute of Physics
ISSN:	0734-211X
Last Modified:	04 Jun 2017 06:48
URI:	https://orca.cardiff.ac.uk/id/eprint/64988

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