Electronic structure of the Si6/Ge6(111) superlattice strained to a Ge substrate

Bass, J. M., Matthai, Clarence Cherian, Milman, V. and Payne, M. 1993. Electronic structure of the Si6/Ge6(111) superlattice strained to a Ge substrate. Semiconductor Science and Technology 8 (12) , pp. 2121-2124. 10.1088/0268-1242/8/12/015

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Abstract

Using the total energy pseudopotential method we have calculated the electronic structure of a Si6/Ge6(111) superlattice, strained to a Ge substrate. We have also calculated the electronic structure of Si and Ge, both unstrained and strained, in the 12-atom hexagonal unit cell of the superlattice and we demonstrate how the lowest lying conduction band states at the face-centred cubic Gamma , X and L-points are dependent on strain, fold in and mix to form the superlattice states. The optical transition matrix elements of the direct transitions are considered and the valence band offset of this heterojunction is calculated

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IOP Publishing
ISSN:	0268-1242
Last Modified:	04 Jun 2017 06:48
URI:	https://orca.cardiff.ac.uk/id/eprint/64990

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