A study of the electronic structure and Schottky barriers at reconstructed Sn/Si interfaces

Anyele, H. T., Cafolla, A. A. and Matthai, Clarence Cherian 1993. A study of the electronic structure and Schottky barriers at reconstructed Sn/Si interfaces. Applied Surface Science 70-71 (2) , pp. 433-437. 10.1016/0169-4332(93)90555-P

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Abstract

Self-consistent electronic structure calculations have been performed on the Sn/Si(111) (√3 × √3) and (2√3 × 2√3) reconstructed surfaces and the Schottky barrier height deduced. The geometric structure of these surfaces was determined by molecular dynamics simulations with the interaction between atoms being described by a valence force field model. We find that the barrier height at the (√3 × √3) interface is lower than that at the (2√3 × 2√3) interface by 0.27 eV. This is in good agreement with experiment

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	0169-4332
Last Modified:	04 Jun 2017 06:48
URI:	https://orca.cardiff.ac.uk/id/eprint/64991

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