The effect of germanium bilayers on the band offsets at the InAs--GaAs interface

Shen, T.-H. and Matthai, Clarence Cherian 1992. The effect of germanium bilayers on the band offsets at the InAs--GaAs interface. Applied Surface Science 56-58 (Part 2) , pp. 746-748. 10.1016/0169-4332(92)90331-Q

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Abstract

Band offsets at semiconductor heterojunctions have been shown to be critically dependent on the interface dipole. In this paper we present results of a pseudopotential study, showing that by the suitable introduction of doping layers at the interface, the band offset can be engineered. We have performed calculations on the InAssingle bondGaAs system with and without a bilayer of germanium at the interface. The band discontinuities vary from nearly zero valence band offset to being nearly zero conduction band offset.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	0169-4332
Last Modified:	04 Jun 2017 06:48
URI:	https://orca.cardiff.ac.uk/id/eprint/64992

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