Pressure dependence of the Schottky barrier height at the nickel-silicide/silicon interface

Shen, T. -H. and Matthai, Clarence Cherian 1991. Pressure dependence of the Schottky barrier height at the nickel-silicide/silicon interface. Journal of Physics: Condensed Matter 3 (5) , pp. 613-615. 10.1088/0953-8984/3/5/010

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Abstract

The authors have calculated the pressure coefficients of the silicon band gap and the Schottky barrier height at the NiSi2/Si interface. The results are in very good agreement with experiment and suggest that this system is described by a metal-induced gap states model.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IOP Publishing
ISSN:	0953-8984
Last Modified:	04 Jun 2017 06:49
URI:	https://orca.cardiff.ac.uk/id/eprint/65069

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