Dynamics of atoms on silicon substrates

Ashu, P., Matthai, Clarence Cherian and Shen, T. -H. 1991. Dynamics of atoms on silicon substrates. Surface Science 251-2 , pp. 955-959. 10.1016/0039-6028(91)91132-H

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Abstract

The molecular dynamics method is used to simulate the diffusion of adatoms on Si(111) and Si(001) surfaces. We propose a scheme whereby the interatomic interactions in multi-component systems can be obtained from a knowledge of the interactions in each component. We find that Ni atoms are more mobile than Si adatoms and that of the (001)(2 × 1) reconstructed surface, Si adatoms prefer to move across the dimers with a very low diffusion barrier.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	0039-6028
Last Modified:	04 Jun 2017 06:49
URI:	https://orca.cardiff.ac.uk/id/eprint/65077

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