Oloumi, M. and Matthai, Clarence Cherian 1990. Electronic structure and band discontinuities in the InAs/GaAs system. Journal of Physics: Condensed Matter 2 (23) , pp. 5153-5160. 10.1088/0953-8984/2/23/005 |
Official URL: http://dx.doi.org/10.1088/0953-8984/2/23/005
Abstract
The electronic band structures of the lattice mismatched InAs/GaAs system has been calculated for three different lattice constants using ab initio pseudopotentials. The effect of strain on the band discontinuities has been investigated with respect to the interface interlayer separation as well as the strain. The superlattice electronic structure is examined within the context of interface states and charge localisation.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Publisher: | IOP Publishing |
ISSN: | 0953-8984 |
Last Modified: | 04 Jun 2017 06:49 |
URI: | https://orca.cardiff.ac.uk/id/eprint/65089 |
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