The Schottky barrier height at the NiSi2-Si(111) interface

Rees, N. V. and Matthai, Clarence Cherian 1989. The Schottky barrier height at the NiSi2-Si(111) interface. Semiconductor Science and Technology 4 (5) , pp. 412-415. 10.1088/0268-1242/4/5/014

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Abstract

The authors have calculated the Schottky barrier heights for the type A and type B NiSi2-Si(111) interfaces. They have found that varying the amount of relaxation of the NiSi2-Si interplanar distance at the type B interface leads to a change in the barrier height of about 20%.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IOP Publishing
ISSN:	0268-1242
Last Modified:	04 Jun 2017 06:50
URI:	https://orca.cardiff.ac.uk/id/eprint/65177

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