Computer simulation of Si and Ge adatoms and thin layers on Si substrates

Ashu, P. and Matthai, Clarence Cherian 1989. Computer simulation of Si and Ge adatoms and thin layers on Si substrates. Journal of Physics: Condensed Matter 1 (Supp B) , SB17-SB20. 10.1088/0953-8984/1/SB/004

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Abstract

The molecular dynamics method is used to determine minimum energy configurations of Si and Ge adatoms on a Si surface. Results for thin layers of Ge on Si substrates and Si-Ge superlattices are also presented.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IOP Publishing
ISSN:	09538984
Last Modified:	04 Jun 2017 06:50
URI:	https://orca.cardiff.ac.uk/id/eprint/65182

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